ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A cellular pattern observed in the top surface electron-beam-induced current image of p-metallized (Al,Ga)As double-heterostructure laser material is investigated and attributed to hydride formation in the grain boundaries of the Ti layer of the TiPt p metallization. This hydride formation occurs when the TiPt p metallization is annealed in a forming gas environment and leads to high initial device degradation rates. When the hydride formation in the Ti layer and therefore the presence of the cellular pattern is eliminated by annealing in a N2 environment, low initial device degradation rates are obtained. The initial device degradation rates for material annealed in N2 are equal to or better than those for devices having a weak cellular pattern and 4–5× lower than for devices with a moderate or strong cellular pattern.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336882
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