Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 278-285
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present data obtained on a set of symmetric GaAs/AlGaAs double-barrier quantum-well structures in which the thickness of the AlGaAs barriers has been systematically varied from 31 to 7.5 nm. Low-temperature I(V ) characteristics, temperature dependencies, and magnetotunneling have been investigated. Our data suggest a dominance of sequential tunneling processes in the range investigated and point to interface roughness in the well as the possible cause for the large valley currents. Our best devices exhibit a current peak-to-valley ratio of about 20.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343869
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