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  • 1985-1989  (3)
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Materialart
Erscheinungszeitraum
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  • 1
    Digitale Medien
    Digitale Medien
    Narrow conducting channels defined by helium ion beam damage (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1964-1966 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have developed a new technique for patterning narrow conducting channels in GaAs-AlGaAs two-dimensional electron gas (2DEG) materials. A low-energy He ion beam successfully patterned narrow wires with little or no etching of the thin GaAs cap. The damage propagation of the He ion even at low energies was sufficient to decrease the mobility of the 2DEG located deep within the structure. The damage can be removed by a low-temperature anneal but remains stable at room temperature. Conducting channels as narrow as 300 nm have been fabricated and measured using low-temperature magnetoresistance.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100337
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Quantum device microfabrication: Resolution limits of ion beam patterning (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 377-379 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have achieved precise control of the lateral electrical damage accompanying ion beam patterning of submicron electron devices from semiconductor materials. In situ transport measurements, made in the etching chamber during the definition process, provide an exact and reproducible means of end-point detection, irrespective of material structure and ion beam parameters. We apply this to routinely fabricate conducting channels having widths below 100 nm from high-mobility GaAs/AlGaAs heterojunctions. Subsequent low-temperature magnetotransport measurements and successive optimization of processing conditions enable us to systematically obtain the minimum conducting width. Through these studies we explore the ultimate resolution limits of the ion beam patterning process.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101876
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2133-2135 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have laterally patterned the narrowest conducting wires of two-dimensional electron gas (2DEG) material reported to date. The depletion induced by low-energy ion etching of GaAs-AlGaAs 2DEG structures was used to define narrow conducting channels. We employed high voltage electron beam lithography to create a range of channel geometries with widths as small as 75 nm. Using ion beam assisted etching by Cl2 gas and Ar ions with energies as low as 150 eV, conducting channels were defined by etching only through the thin GaAs cap layer. This slight etching is sufficient to entirely deplete the underlying material without necessitating exposure of the sidewalls that results in long lateral depletion lengths. At 4.2 K, without illumination, our narrowest wires retain a carrier density and mobility at least as high as that of the bulk 2DEG and exhibit quantized Hall effects. Aharonov–Bohm oscillations are seen in rings defined by this controlled etch-damage patterning. This patterning technique holds promise for creating one-dimensional conducting wires of even smaller sizes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98970
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