Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1985-1989  (2)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 6597-6604 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Surface diffusion of hydrogen, deuterium, and CO on Rh(111) has been investigated by laser-induced thermal desorption (LITD) and compared with previous results for these species on Pt(111) and on other metals. As the coverage θ of deuterium increases from 0.02 to 0.33, the preexponential factor D0 remains constant at 8×10−2 cm2/s, but the diffusion activation energy Ediff rises from 3.7 to 4.3 kcal/mol. Ediff for hydrogen is 0.6 kcal/mol lower than for deuterium, consistent with the difference in zero-point energy. For CO, Ediff =7 kcal/mol at all coverages, but D0 rises from 10−3 to 10−2 cm2/s between θ=0.01 and 0.40. Values of Ediff for these adsorbates vary by several orders of magnitude for surfaces on which heats of adsorption are essentially identical. These differences appear to correlate with differences in heats of adsorption in different binding states which form saddle point configurations in surface diffusion. Ediff is found to be nearly identical to the reaction activation energies for the CO and hydrogen oxidation reactions on Rh and on several other transition metal surfaces. This suggests that surface diffusion of the reducing agent may be the rate-limiting step in their bimolecular surface reactions.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4963-4972 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) has until now been a technique used primarily for characterization of bulk electronic band structure in semiconductors. However, since reflectance is an interfacial phenomenon, PR should in principle be sensitive to surface treatment as well. The present work appears to be the first quantitative use of PR to measure the effects of surface treatment. In particular, PR spectra of air-oxidized and of annealed GaAs(100) are shown to be substantially different from those of the clean surface. Spectra at the E0 (1.4 eV) and E1 (3.0 eV) transitions respond quite differently to these treatments, and the differences are explained in terms of an optical interference phenomenon due to excitons that occurs only at E0. Effects of slow surface states have been observed with PR for the first time. The effective barrier between these states and the bulk decreases from 21±2 to 16± 2 meV upon air oxidation of the clean surface.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...