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  • 1985-1989  (2)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 843-845 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The response characteristics of palladium-gate metal-insulator-silicon field-effect transistor (MISFET) structures to hydrogen are shown to be logarithmically related to the partial pressure of the gas. It is proposed that these palladium-gate MIS structures should be considered as electrochemical devices where the metal/insulator structure behaves as a gas electrode. The results presented were obtained for hydrogen in air and therefore relate directly to the use of these devices as sensors for use in the ambient environment.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Child 12 (1986), S. 0 
    ISSN: 1365-2214
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine , Psychology
    Notes: Summary A survey of remedial teaching based on a particular method and carried out in an NHS clinic over 2 years has been presented. The findings suggest a differential pattern of improvement both for reading and spelling as well as for type of learning difficulty, whether ‘backward’ or ‘specifically retarded’. A plea for early recognition of specific learning difficulties and the provision of appropriate remedial teaching is made as the present findings suggest that a structured method of teaching can lead to improvement in both reading and spelling.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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