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Digitale Medien

Antitumor effect of methylglyoxal bis(3-aminopropyl-amidinohydrazone), a new inhibitor of S-adenosylmethionine and ornithine decarboxylases, on human erythroid leukemia K562 cells (1988)

Hibasami, H. ; Tsukada, T. ; Maekawa, S. ; [weitere]

Springer

Cancer chemotherapy and pharmacology 22 (1988), S. 187-190

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ISSN: 1432-0843

Quelle: Springer Online Journal Archives 1860-2000

Thema: Medizin

Notizen: Summary Methylglyoxal bis(3-aminopropylamidinohydrazone (MGBA) inhibited S-adenosylmethionine decarboxylase (AdoMetDC) activity competitively with S-adenosylmethionine (AdoMet), showing a Ki value of 2.60x10-5 M. It also inhibited ornithine decarboxylase competitively with ornithine, showing a Ki value of 3.80x10-5 M. MGBA inhibited the growth of human erythroid leukemia K562 cells. Putrescine, spermidine, and spermine concentrations in MGBA-treated cells were depressed to 19%, 36%, and 66% of the values of control cells, respectively.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00273408

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Digitale Medien

Large magnetoresistivity of sputtered Al-(O or N)-Bi alloys (1988)

Inoue, A. ; Matsuzaki, K. ; Shirakawa, S. ; [weitere]

Springer

Journal of materials science 23 (1988), S. 2355-2360

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ISSN: 1573-4803

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau

Notizen: Abstract Application of the sputtering technique to (Al2O3)xBi100−x and (AIN)x Bi100−x (x = 0 to 100%) has been found to result in the formation of a duplex material consisting of hexagonal bismuth particles dispersed finely and homogeneously in amorphous AlxOy and AlxNy matrices. The particle size and interparticle distance of the bismuth phase were about 5 to 140nm and 5 to 35 nm. The duplex alloys have high electrical resistivities ranging from 1.82 × 103 to 3.16 × 105 μΩcm combined with a negative temperature-dependent resistivity of 148 to 342% of ϱ273. Furthermore, all the Al-O-Bi and Al-N-Bi alloys have been found to exhibit a positive magnetoresistive change and the maximum value, Δϱ(H), at 4.2 K and 7.5T reaches 5.85 × 104 μΩ cm for (Al-O)65.7Bi34.3 and 1.99 × 105 μΩcm for (Al-N)69.7 Bi30.3. The large magnetoresistivities are probably due to the unique sputtered structure consisting of metallic bismuth particles with a long mean free path of electrons embedded finely and homogeneously in amorphous AlxOy or AlxNy matrix, resulting in the large difference of the relaxation times (different mobilities) of electron carriers. It has thus been demonstrated that the oxide- or nitride-based composite materials exhibiting large magnetoresistivities, which cannot be achieved in metallic composite materials, are obtained by sputtering simultaneously Al2O3 or AIN and bismuth which is immiscible to aluminium.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01111887

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