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  • 1985-1989  (6)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 760-762 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Incidence angle effect of a hydrogen plasma beam with an ion energy of about 20 eV was observed in a cleaning process for GaAs and Si surfaces for the first time. An atomically flat (001) GaAs substrate surface which was observed by clear Laue spots was prepared with a glancing angle of incidence. Similar improvement of smoothness was observed with the glancing angle of incidence on a Si surface when it was compared with perpendicular incidence. The mechanism is discussed considering momentum transfer parallel to the surface in the collision process and the resultant migration enhancement on the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101798
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Extremely wide modulation bandwidth in a low threshold current strained quantum well laser (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1378-1380 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lasing characteristics of strained quantum well (QW) structures such as InGaAs/AlGaAs on GaAs and InGaAs/InAlAs on InP were analyzed by taking into account the band mixing effect in the valence band. A relaxation oscillation frequency fr, which gives a measure of the upper modulation frequency limit, was found increased three times in a 50 A(ring) In0.9Ga0.1As/In0.52Al0.48As QW structure compared with that in a 50 A(ring) GaAs/Al0.4Ga0.6As QW structure for the undoped case. One of the main factors for this improved frequency bandwidth is attributed to the reduced subband nonparabolicity as well as the reduced valence-band density of state in the strained QW structure. The corresponding lasing threshold current is one order of magnitude smaller than that of the GaAs/AlGaAs QW structure. With a p doping in the QW the fr value increases, and the 3 dB cutoff frequency of about 90 GHz will be expected with an acceptor concentration of 5×1018 cm−3 in the In0.9Ga0.1As/In0.52Al0.48As QW.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99984
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Lasing in a ZnS0.12Se0.88/ZnSe multilayer structure with photopumping (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 981-983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photopumped lasing in a ZnS0.12Se0.88/ZnSe multilayer structure up to 180 K is reported for the first time. The films were grown by metalorganic vapor phase epitaxy on (001) GaAs. The purpose of using the multilayer structure is to prevent the diffusion of the photoexcited carriers to have population inversion sufficient for lasing. The possibility of lasing at the higher temperature is briefly discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100755
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Quantum-confined field-effect light emitters with high-speed switching capability (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1149-1151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field control of luminescent characteristic is observed with the three-terminal quantum-confined field-effect light-emitting device at a high temperature of 100–300 K. The modulation scheme caused by the field-induced change in radiative lifetime without change in carrrier density is demonstrated in the practical device. A fast switching of the spontaneous emission intensity free from lifetime limitation is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101680
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    New low-temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasma (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2173-2175 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new low-temperature cleaning as well as a growth method using a hydrogen (H) plasma was successfully applied to the growth of GaAs on Si. The H plasma is expected to play several roles, such as cleaning the Si surface just prior to growth, decomposition of the metalorganic sources introduced without thermal cracking for the GaAs growth, supplying H radicals to terminate the organic-alkyl radicals, and enhancement of the mobilities for the surface migration. The almost atomically flat Si clean surface was prepared at a temperature as low as 300 °C using the H plasma. A single-domain GaAs epilayer was successfully realized at 400 °C after growth of 100 nm on a two-domain (001) Si surface using triethylgallium and triethylarsenic introduced without thermal cracking. The films were grown just after surface cleaning with the H plasma in the same chamber. Therefore, the reduction of the temperature for the whole growth process is possible with this new method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100273
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Noncontact photoacoustic measurements of semiconductors with Michelson interferometry (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 615-617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Noncontact photoacoustic measurements were performed on GaAs samples with Michelson interferometry. The detection sensitivity of the vibration amplitude up to 0.01 A(ring) was achieved. It is demonstrated that the sensitivity is increased drastically by the resonance of the sample itself. The sensitivity for the temperature rise is estimated to be on the order of 2×10−5 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335622
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    Paper (German National Licenses)
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