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  • 1
    ISSN: 1432-1181
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Description / Table of Contents: Zusammenfassung Der Aufsatz behandelt das Aufschmelzen einer horizontalen Eisschicht von oben mittels einer wäßrigen Lösung niedrigen Gefrierpunktes. Die in diesem Experiment verwendeten Lösungen sind Natriumchlorid NaCl, Kalziumchlorid CaCl2, Magnesiumchlorid MgCl2 und Harnsäure CO(NH2)2. Die Oberfläche der wäßrigen Lösung und der Schmelze wurde mit einer Infrarotlampe beheizt, deren Temperatur bei 8–40
    Notes: Abstract This paper is concerned with the melting of horizontal ice layer from above by aqua-solvent with low solidification point. The solute used in this experiment are Sodium chloride NaCl, Calcium chloride CaCl2, Magnesium chloride MgCl2, and Urea CO(NH2)2- The upper surface of aqua-solvent melt layer is heated by an infrared lamp, whose temperature is in the range of about 8
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1353-1355 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We grew In1−xGaxAsyP1−y/InP quantum wells (QWs) by low-pressure metalorganic vapor phase epitaxy. The In1−xGaxAsyP1−y layer was closely lattice matched to InP with a composition of y=0.9 (x=0.47y). We investigated structural imperfections such as composition fluctuations, interface roughness, and nonperiodicity analyzing the low-temperature photoluminescence linewidth. We found that the InGaAsP layer composition fluctuated, causing about 5 meV inhomogeneity in the exciton energy level in QWs wider than about 3 nm. Since we obtained very smooth interfaces with less than one monolayer of fluctuation and excellent periodicity by lowering growth temperature to 570 °C, the inhomogeneity of the exciton energy level could be held at 6 meV for 20-period 10-nm multiple QWs. As a result, despite composition fluctuations, a clear room-temperature exciton optical absorption peak was observed at 1.5 μm for the first time to our knowledge.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1961-1963 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Admittance spectroscopy is applied to the analysis of the thermal properties of the Mn acceptor-doped InP grown by liquid-phase epitaxy. The thermal activation energy and capture cross section are determined as ΔET=183 meV and σp=1.8×10−13 cm2, respectively. The cutoff frequency of the emission of holes from the Mn acceptor is 1 GHz at 300 K. It is shown that the small signal frequency characteristic of a buried heterostructure laser is improved at frequencies f〉1 GHz by using the Mn-doped p-InP layer for the current blocking region.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4698-4700 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped semi-insulating (SI) InP layers have been grown using chloride vapor-phase epitaxy for the first time. Fe-doping was carried out by introducing FeCl2 to the growth region, bypassing the source region. The FeCl2 was formed by etching a pure metallic Fe source by HCl vapor. The resistivity of the SI-InP epitaxial layers was evaluated by measuring current-voltage characteristics, and a high value of 4×108 Ω cm was obtained. The semi-insulating current blocking was maintained up to an applied voltage of nearly 30 V, even at 110 °C, with a layer 4.3 μm thick.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 574-576 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped semi-insulating In1−x Gax Asy P1−y (0≤y≤1, y=2.2x) epitaxial layers lattice matched to InP with nearly intrinsic carrier concentrations have been successfully grown over the entire composition range by liquid phase epitaxy. Maximum resistivities as high as 8×107 Ω cm for InP, 2×105 Ω cm for InGaAsP (y=0.57), and 2×103 Ω cm for InGaAs (y=1) have been achieved. The critical growth temperature necessary to obtain semi-insulating layers significantly decreased as the composition was varied from y=0 to y=1. The Fe doping characteristics are well defined by the composition dependence of the Fe distribution coefficient.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2290-2292 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We evaluated the magnitude of broadening factors of ground-state exciton absorption peaks in In1−xGaxAsyP1−y/InP (x=0.47y) multiple quantum wells (MQW's) with about 10 nm wells. The absorption peaks broadened with a decrease of y. Analyzing the absorption peak broadening with increasing temperature, the thermal broadening factor at 300 K was found to be about 9 meV and composition independent. Analyzing the photoluminescence linewidth at 4.2 K, it was found that composition fluctuations in the well caused an inhomogeneity of the exciton energy level of 4.4 meV for the y=1.0 MQW and 7.5 meV for the y=0.6 MQW, being the greatest contributors to inhomogeneous broadening. We conclude that the exciton absorption peak broadening with a decrease of y is primarily due to the increase of composition fluctuations.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 742-744 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of In1−xGaxAsyP1−y/InP superlattices (x=0.27 and y=0.60) is investigated by small-angle x-ray diffraction method. The interference peaks due to the superlattice structure were clearly observed up to the 6th order. The period of the superlattice was determined from the angular positions of the peaks using the modified Bragg's law. By analyzing the diffraction patterns of the first and the secondary peaks according to the optical multilayer theory, the thickness of each component (In1−xGaxAsyP1−y and InP) was uniquely determined within an error of ±1 A(ring). This method can be used to determine any type of superlattice structure.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Heat and mass transfer 20 (1986), S. 133-139 
    ISSN: 1432-1181
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Description / Table of Contents: Zusammenfassung Der Aufsatz behandelt das Schmelzen einer Schneeschicht mittels Übersprühen mit einer wäßrigen Kalziumchloridlösung einer Temperatur von 0°C mit dem Ziel, die Einflüsse unterschiedlicher Anfangskonzentrationen der Lösung, verschiedener Sprühmengen und unterschiedlich dichte Packung des Schnees in der Anfangsphase des Aufschmelzens zu untersuchen. Die Schmelzrate im Inneren der Schneeschicht ist groß, verglichen mit der auf der Schneeoberfläche. Im Verlauf der Aufschmelzzeit sinkt die Temperatur der Schneeschicht langsam auf die fest-flüssige Gleichgewichtstemperatur. Dies entspricht der Temperaturabsenkung bei der Erstarrung. Die Temperaturverteilung senkrecht zur Schneeschicht vergleichmäßigt sich bei der Gleichgewichtstemperatur. Deshalb resultiert nach dieser Anfangsperiode die Schmelzmasse hauptsächlich nur aus dem Aufschmelzen an der Oberfläche. Aus diesen Tatsachen kann auf ein Schmelzverhalten in der Anfangsperiode geschlossen werden, das hauptsächlich durch die chemische Reaktion bestimmt ist. Es wird gezeigt, daß die in dem vorgestellten Experiment ermittelten Ergebnisse nützliche, grundlegende Hinweise für die Beschleunigung des Abschmelzens einer Schneeschicht geben können.
    Notes: Abstract This paper is concerned with the melting of snow layer by showering the Calcium Chloride aqueous solution at the temperature of 0°C to obtain the effects of initial concentration of the solution, showering amount of the solution and density of packed snow sample on melting of snow, in the short period after snow melting being initiated. The rate of internal melting in the snow layer is great compared with that of the surface melting. As melting time passes, the temperature of snow layer gradually decreases to the solid-liquid equilibrium temperature. This phenomenon corresponds to the solidification temperature drop. The temperature distribution in the normal direction in snow layer becomes uniform at the equilibrium temperature. Therefore, after this period the major part of melt amount is surface melting only. From this fact the typical melting behaviour may be mainly induced by the effect of chemical reaction. It is demonstrated that the results obtained in this experiment could give an useful basic information for accelerating the melting of snow layer.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1612-1112
    Keywords: Supercritical fluid chromatography ; Flow switching pressure regulator ; Pressure programming
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Summary The newly developed regulating valve is based on high-speed flow switching, and is capable of controlling the column outlet pressure independent of the mass flow-rate of the fluid. The reproducibility of retention times in pressure-programming elution on a 4.6 mm i.d. ×250mm long silica gel column was better than 1% with supercritical carbon dioxide as the mobile phase. The outlet mass flow-rate decreased while the pressure was increasing, keeping the input flow to the system constant; this was due to the compressibility of the fluid. The amount of decrease in the outlet flow was calculated by introducing an analogous circuit model and new parameters, instrumental and column capacitances. The result agreed with the measured value within 30% error.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Fresenius' Zeitschrift für analytische Chemie 321 (1985), S. 68-71 
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Summary A differential pulse polarographic determination of nickel(II) in the lower ppb region is possible by the addition of a dithiocarbamate, N-(dithiocarboxy)sarcosine, which forms water-soluble complexes with metal ions. An enhanced reduction current, due to adsorption of the complex, is obtained in an electrolysis solution composed of 0.1 M KCl and 0.015 M (NH4)2oxalate/0.02 M NaOH buffer in the presence of dithiocarbamate. The nickel(II) content in standard reference materials was accurately determined after separation of Fe(III) and Zn(II) by an anion-exchange technique. 0.89 and 1.36 (1.39) μg/g have been recovered from the certified values of 1.03 and 1.3 μg/g, respectively.
    Notes: Zusammenfassung Durch Zusatz eines Dithiocarbamates, N-(Dithiocarboxy)sarcosin, das mit Metallionen wasserlösliche Komplexe bildet, wird die differential-pulspolarographische Bestimmung von Nickel(II) im unteren ppb-Bereich ermöglicht. In der Dithiocarbamat enthaltenden Grundlösung aus 0,1 M KCl und 0,015 M (NH4)2-Oxalat/0,02 M NaOH-Puffer erhält man wegen der Adsorption des Komplexes einen erhöhten Reduktionsstrom. Nach Abtrennung des Fe(III) und Zn(II) durch Ionenaustausch konnte der Nickel(II)-Gehalt in Standardreferenzproben mit guter Genauigkeit bestimmt werden. Von den zertifizierten Werten 1,03 bzw. 1,3 μg/g konnten 0,89 bzw. 1,36 (1,39) μg/g wiedergefunden werden.
    Type of Medium: Electronic Resource
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