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  • 1
    Electronic Resource
    Electronic Resource
    Lasing characteristics of 0.8-μm InGaAsP/GaAs lasers fabricated by wet chemical etching (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3767-3772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 0.8-μm InGaAsP/GaAs stripe lasers, in which cavity mirrors were formed by two-step wet chemical etching, have been fabricated monolithically. The laser resonators were aligned along the 〈011¯〉 and the 〈010〉 directions. The first etching was done in 5% Br methanol. The secondary etching was done in H2SO4:H2O2:H2O (3:1:1 by volume) etchant for the active layers only, and gave low threshold lasers. Their threshold current densities were compared with those of the cleaved-mirror lasers made from the same wafer. Some longitudinal lasing modes were observed in the wavelength range of 805–810 nm. The characteristic temperature T0 was 116 K in the temperature range 28–87 °C. The relationship between the state of the etched facets and the near- and far-field patterns was examined. It was found that this two-step etching technique for the laser mirrors is very suitable for aligning the lasers along desirable directions on the same wafer for monolithic integrated optical circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343387
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  • 2
    Electronic Resource
    Electronic Resource
    A simple method for monolithic fabrication of InGaAsP/GaAs lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2770-2772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple method for the fabrication of Fabry–Perot mirrors of InGaAsP/GaAs lasers is presented. The vertical and smooth wall etching is done for active layers only (not for both active and cladding layers), by an H2SO4:H2O2:H2O=3:1:1 etchant for 2–5 s. Since the active layers are much thinner than the cladding layers, the etching becomes much easier. The threshold current density of the etched mirror laser is ∼4.4 kA/cm2, about 1.1 times that of the cleaved laser, and the mirror reflectivity is evaluated as 29.4% (cleaved 31.4%).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341626
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  • 3
    Electronic Resource
    Electronic Resource
    X-ray study of a ferroelectric twin in poly(vinylidene fluoride) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 970-972 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A possibility for ferroelectric twinning of 60° domains existing in the phase-I crystallite of poly(vinylidene fluoride) has been examined by the use of an x-ray diffraction method. Interdomain interference causes anomalous splitting of the calculated diffraction peaks. Anomalous changes in the profiles are observed for the crystallites in a film under electric fields up to 120 MV/m, and can be explained in terms of the twin structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98779
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  • 4
    Electronic Resource
    Electronic Resource
    Canopy structure and productivity of Festuca avundinacea Schreb. swards during vegetative and reproductive growth (1985)
    Oxford, UK : Blackwell Publishing Ltd
    Grass and forage science 40 (1985), S. 0 
    Details
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Canopy structure, productivity and their relationships were examined in 2-year-old swards of fourteen tall fescue (Festuca arundinacea Schreb.) strains during the vegetative and reproductive growth stages. During the vegetative growth stage morphological characters, particularly tiller size, were closely associated with productivity. Swards with large tillers showed an effective distribution of the incoming light energy within the canopy and hence low extinction coefficient (K) value and high productivity at complete light interception. On the other hand, although there was no apparent correlation between K and the productivity or the whole crop during the reproductive growth stage, the productivities of the reproductive and vegetative tillers were positively and negatively related to K respectively. Leaf area index of the reproductive tillers and their position in the canopy had marked effects on the distribution of the incoming light energy within the canopy and on the productivity of both types of tillers. The productivity of the vegetative and the reproductive tillers is discussed in terms of the effect of the competition for incoming light energy between both types of tillers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2494.1985.tb01719.x
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  • 5
    Electronic Resource
    Electronic Resource
    New double-heterostructure indium-tin oxide/InGaAsP/AlGaAs surface light-emitting diodes at 650-nm range (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2181-2185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New double-heterostructure indium-tin oxide/InGaAsP/AlGaAs surface light-emitting diodes have been fabricated by liquid-phase epitaxy and rf sputtering methods. In this structure, indium-tin oxide acts as both an n-type cladding layer and a transparent conductor. Peak wavelength and full width at half maximum of the surface emitting spectrum were 653 and 17 nm, respectively. An output power of 1 mW was achieved at a current level of 66 mA, corresponding to a current density of 22 A/cm2 under pulsed operation for the diode with a 400 μm×450 μm emitting area. The optical emission was distributed over the entire emitting area.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344315
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of InGaAsP surface treatment for indium-tin-oxide/InGaAsP/GaAs solar cells (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3337-3341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performances of n-indium-tin-oxide (ITO)/n-InGaAsP/p-GaAs solar cells in which the chemical treatment at the ITO/InGaAsP heterointerface is varied are compared: HNO3 treatment, HCl treatment, and nontreatment. The cells with HNO3 treatment show good solar-cell performance in spite of large lattice mismatch between ITO and InGaAsP. Others do not show even rectifying behavior. The structure of the cells with HNO3 treatment is thought to be a semiconductor-insulator-semiconductor structure, and its current model follows the tunneling model. By Auger analysis the oxide layer, which is thought to be formed by HNO3 treatment, was ascertained. Using the heterostructure back-surface field for the cells with HNO3 treatment, the highest efficiency attained so far is 10.9% (total area) under AM1 illumination normalized to 100 mW/cm2; the corresponding open-circuit voltage, short-circuit current density, and fill factor are 0.56 V, 28.8 mA/cm2, and 0.677, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344130
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic properties and domain structures in domain refined grain-oriented silicon steel (invited) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2966-2970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present paper is concerned with the development of low-loss grain-oriented silicon steel, and especially with the magnetic properties and domain structures in domain refined grain-oriented silicon steel. The effects of locally induced stress and slight magnetic flux emergence have been examined as possible nucleation centers for effective domain walls which contribute to magnetization. The fundamental phenomena and their origins have been discussed on the bases of experimental facts. It was concluded that these domain refining effects were based upon interactions between subdomains having transverse magnetization, which originate from magnetic free poles and/or internal stress, and tensile stress in silicon steel with orientation near (110)[001]. The features of magnetic properties and domain structures of domain refined grain-oriented silicon steel both for stack and wound cores are described. Finally, a new technique for raising the degree of (110)(001) orientation is introduced, and the approach to minimum loss in grain-oriented silicon steel is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340917
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  • 8
    Electronic Resource
    Electronic Resource
    Fabrication methods for InGaAsP/GaAs visible laser structure with AlGaAs burying layers grown by liquid-phase epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 761-768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Liquid-phase-epitaxial (LPE) growth of AlGaAs layers has been used in fabricating InGaAsP buried heterostructure visible lasers on GaAs substrate. InGaAsP/InGaAsP double heterostructure wafers were grown on the p-type GaAs substrates by means of the melt-back method prior to the LPE growth for eliminating phosphorus contamination. An SiO2 film mask was deposited on the epitaxial wafer surface by the rf sputtering, and photoetched with stripes of 7–10 μm width in the 〈110〉 direction. After etching to the first p-InGaAsP cladding layer with a 3% Br-methanol solution, the second LPE growth of n-AlGaAs and p-GaAs layers was carried out. The InGaAsP active region is entirely surrounded by the InGaAsP cladding layers and the AlGaAs burying layer, therefore, it becomes possible to provide both lateral and vertical carrier and optical confinements. I-L characteristics were measured at room temperature under pulsed operation, but the lasing action was not obtained. The peak wavelength of the electroluminescence was 785 nm. The transverse mode behavior was analyzed by means of the effective refractive index approximation. And it seemed that this buried heterostructure is suitable for the transverse mode control of InGaAsP visible laser diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337034
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of phosphorus vapor ambient for InGaAsP growth on GaAs substrate (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3895-3899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 °C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (λPL=805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be changed. As a result of increasing the flow rate of H2 gas in order to protect the solution for the active layer from phosphorus contamination, the double heterostructure wafers with the high-quality active layer can be obtained reproducibly. Thus, pulsed lasing operation at room temperature has been achieved. The lasing wavelength is 816 nm and the threshold current density is ∼4.6 kA/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337562
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  • 10
    Electronic Resource
    Electronic Resource
    High-speed light valve using an amorphous silicon photosensor and ferroelectric liquid crystals (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1233-1235 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel high-speed response light valve composed of a hydrogenated amorphous silicon (a-Si:H) photosensor and a chiral smectic C phase liquid crystal is presented for the first time. This device is optically addressed. The switching between on and off states is caused by reversing the polarity of the applied voltage across the liquid crystal due to the photocurrent from the a-Si photosensor. The response time measured is about 400 μs. The switching speed of this device is one to two orders of magnitude faster than that of the nematic liquid-crystal light valve. This device can be applied to optical bistable devices without optical feedback, using an electro-optic memory effect of the ferroelectric liquid crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98740
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