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  • 1
    Electronic Resource
    Electronic Resource
    New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 397-403 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An unusual new line has been observed in the low-temperature photoluminescence spectrum of GaAs/AlGaAs epilayers grown by liquid-phase epitaxy, which represents a unique probe of the heterointerface. A very strong, broad and asymmetric line is seen, with peak energy ranging from that of the bound exciton to that of the shallowest acceptor, increasing roughly linearly with the logarithm of the excitation power. The intensity is seen to exhibit a very strong temperature dependence as the temperature is varied from 1.4 K up to about 20 K where the line falls below the background luminescence intensity. Intensity and energy dependence of the luminescence as a function of the Al mole fraction on one side of the junction is also investigated. By employing a novel step-etching technique, this transition is shown to originate from the GaAs/AlGaAs heterojunction. A qualitative model is proposed to explain the observed data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335692
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence of AlGaAs:Ge and GaAs:Ge and Sn grown by liquid-phase epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2896-2899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of Ge-doped AlxGa1−xAs and Sn-doped GaAs were investigated at 1.4 K. The ionization energy of Ge is strongly dependent on the Al composition in AlGaAs, and is in very poor agreement with the effective mass value. The ionization energy of Sn was found to be 110 meV in contrast with previously reported values. We also report a Sn acceptor bound excitation line at 1.507 eV in Sn-doped GaAs, and a broad luminescence band peaking at ∼1.5 eV in Ge-doped AlGaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335227
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    An only 2-step Q-superlinear convergence example for some algorithms that use reduced hessian approximations (1985)
    Springer
    Mathematical programming 32 (1985), S. 224-231 
    Details
    ISSN: 1436-4646
    Keywords: Constrained Optimization ; Reduced Hessian ; Q-superlinear Convergence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science , Mathematics
    Notes: Abstract It is shown by example that the reduced Hessian method for constrained optimization that is known to give 2-stepQ-superlinear convergence may not convergeQ-superlinearly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01586092
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    A recursive quadratic programming algorithm that uses differentiable exact penalty functions (1986)
    Springer
    Mathematical programming 35 (1986), S. 265-278 
    Details
    ISSN: 1436-4646
    Keywords: Constrained optimization ; exact penalty functions ; global convergence ; line search functions ; recursive quadratic programming
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science , Mathematics
    Notes: Abstract In this paper, a recursive quadratic programming algorithm for solving equality constrained optimization problems is proposed and studied. The line search functions used are approximations to Fletcher's differentiable exact penalty function. Global convergence and local superlinear convergence results are proved, and some numerical results are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01580880
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    Paper (German National Licenses)
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