Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1985-1989  (18)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    High-frequency strain response in ferroelectrics and its measurement using a modified Mach-Zehnder interferometer (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2807-2813 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we report on a modified Mach-Zehnder interferometer which is capable of measuring the ultrashort time strain response of a sample. Using this instrument, the dispersion of piezoelectric and electrostrictive coefficients of several commonly used ferroelectrics was measured. The strain switching behavior of lead lanthanum zirconate titanate (PLZT) 9/65/35 driven by a square pulse electric field was studied. The results show that the switching rise time of the strain response for PLZT 9/65/35 can be much shorter than 5 μs at a pulse field strength near 25 kV/cm and that the fall time of the strain response is considerably shorter than the rise time in the experimental field strength range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342744
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Doping effects of 3D metal on single-phase YBa2Cu3O7−δ (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3589-3592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The measurements of x-ray diffraction, the temperature dependence of the dc resistance and the ac susceptibility have been performed for the single-phase 3D-metal doping systems YBa2 Cu3−x Mx Oy (M=Fe, Co, and Ni; x=0.025, 0.05, 0.075, 0.10, 0.25, and 0.50 for Ni and Co and 0.05, 0.075, 0.10, 0.15, and 0.20 for Fe). With an increase of impurity content, two structural transitions were observed for the Co and Fe dopants but only one for the Ni dopant. The resistivity in the normal state changes from metallic to semiconductinglike behavior and the depression of Tc is linear with the impurity concentration (x) when x〈0.10. A weak Curie–Weiss type paramagnetism, which is enhanced with impurity content, exists in the samples studied. Incorporating other work on oxygen defects, we suggest that a change of oxygen content induced by doping was the dominant effect on superconductivity in these samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341393
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Domain wall excitations and their contributions to the weak-signal response of doped lead zirconate titanate ceramics (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6445-6451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ac field dependence of the polarization and strain responses of three different compositions of doped lead zirconate titanate ceramics were measured for samples in both the poled and the depoled states. The results indicate that a reversible domain wall excitation exists which contributes to the weak-signal response of these materials. Irreversible domain wall motion can be excited within the frequency range measured by applying a field above a threshold field, which is much smaller than the coercive field. Therefore, the weak-signal linear dielectric, piezoelectric, and elastic coefficients of these materials may not provide a suitable description of their behavior when the external applied field exceeds this threshold field. All the observed phenomena can be explained by thermally activated domain wall fluctuations and nucleations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342059
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Laser interferometer for the study of piezoelectric and electrostrictive strains (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2492-2496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified Michelson interferometer is used to study the strain properties of piezoelectric and electrostrictive materials. For small displacement, a feedback loop is introduced to stabilize the system against the low-frequency optical path-length drifting and the system is capable of resolving displacements of the order of 10−3 A(ring). For the strain induced by domain switching, a dual-channel signal detection scheme is used which automatically reads out the displacement of the sample. The effect on the measurement of the sample bonding to a substrate and other related problems are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341027
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Large displacement transducers based on electric field forced phase transitions in the tetragonal (Pb0.97La0.02) (Ti,Zr,Sn)O3 family of ceramics (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 6014-6023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several properties associated with the field-induced phase change between the antiferroelectric and ferroelectric states in tetragonal (Pb0.97 La0.02 )(Sn,Ti,Zr)O3 antiferroelectric ceramic family were investigated for high-strain displacement transducer applications. The longitudinal field-induced strain accompanying the phase change is in the range of 0.2%–0.9%. The single-shot switching time between the two states is on the order of 1–2 μs. Under continuous ac field driving, the hysteretic heating effect introduces a temperature rise, changing the original room-temperature switching behavior. The ceramics degrade under ac field excitation, the average life cycles is in the range of 106 –107 cycles which can be greatly improved by carefully polishing the sample surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343578
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Photodissociation of semiconductor positive cluster ions (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 1670-1677 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Laser photofragmentation of Si, Ge, and GaAs positive cluster ions prepared by laser vaporization and supersonic beam expansion has been investigated using tandem time-of-flight mass spectrometry. Si clusters up to size 80, Ge clusters to size 40, and GaAs clusters up to a total of 31 atoms were studied. Si+n and Ge+n for n=12–26 give daughter ions of about half their original size. For both Si and Ge, this apparent positive ion fissioning appears to go over with increasing n to neutral loss of seven and ten, but for Si+n the range of n values where this is observed is rather small. At low fluences, the larger Ge+n clusters up to the maximum size observed (50) sequentially lose Ge10 (and in some cases with lower intensity Ge7). Larger Si+n clusters (n〉30) always fragment primarily to produce positive ion clusters in the 6–11 size range with a subsidiary channel of loss of a single Si atom. At high laser fluences, Ge+n also fragments to produce primarily positive ion clusters in the 6–11 size range with an intensity pattern essentially identical to Si+n at similar fluences. GaxAs+y clusters lose one or more atoms in what is probably a sequential process with positive ion clusters in which the total number of atoms, x+y, is odd being more prominent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454145
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Photodetachment and photofragmentation studies of semiconductor cluster anions (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 7434-7441 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Silicon, germanium, and gallium arsenide negative cluster ions are produced by laser vaporization followed by free supersonic expansion. Electron affinities (EA) of the corresponding neutral clusters are roughly bracketed by measuring the fluence dependence for photodetachment from anions at discrete probe laser wavelengths (above the photodetachment threshold the dependence on fluence is linear, below it is quadratic). An even/odd alternation is found in the negative ion distribution with gallium arsenide clusters with an odd number of atoms having higher EA's than their even neighbors. This suggests that the surfaces of the even clusters are extensively restructured in a way which eliminates dangling chemical bonds. For GaxAsy with x+y constant, EA increases with increasing ratio of y to x. The EA of silicon increases smoothly with cluster size extrapolating towards the EA of bulk silicon. Photofragmentation studies show that, like the corresponding positive ions, silicon and germanium negative ions with 11 to 23 atoms fission into mainly 5 to 10 atom negative ions. Si−10 and Ge−10 are the favorite daughters suggesting the existence of a special structure for ten atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451332
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Supersonic cluster beams of III–V semiconductors: GaxAsy (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 4074-4079 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Supersonic beams of semiconductor clusters with the formula GaxAsy were generated by laser vaporization of a disc of pure GaAs mounted on the side of a pulsed supersonic nozzle. These cluster beams were characterized by laser photoionization with various fixed-frequency lasers followed by time-of-flight mass spectrometry. Mass analysis of the clusters with x+y〉10 showed all clusters in the composition range from Gax+y through GaxAsy to Asx+y to be present in roughly the amount expected from a binomial distribution. In the smaller clusters strong variations were observed from this expected binomial distirbution as a result of kinetic effects in the cluster formation process. Photoionization with an ArF excimer laser at very low pulse energy revealed a pronounced even/odd alternation in the photoionization cross section of the GaxAsy clusters, depending only on the total number of atoms in the cluster. Clusters in the 5–21 atom range with an odd number of atoms were one-photon ionized by the 6.4 eV ArF excimer laser photons. This even/odd alternation in ionization properties of the clusters supports the view that the even clusters have fully paired singlet ground states with no dangling bonds. At higher ArF excimer laser fluences, the observed mass spectrum became increasingly affected by fragmentation. As is true with bulk GaAs surfaces, these GaxAsy clusters evaporate largely by the loss of arsenic (probably As2) when heated by the laser, leaving behind clusters which are richer in gallium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.450069
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    The dynamics of bubble growth for Rayleigh–Taylor unstable interfaces (1988)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 31 (1988), S. 447-465 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A statistical model is analyzed for the growth of bubbles in a Rayleigh–Taylor unstable interface. The model is compared to solutions of the full Euler equations for compressible two phase flow, using numerical solutions based on the method of front tracking. The front tracking method has the distinguishing feature of being a predominantly Eulerian method in which sharp interfaces are preserved with zero numerical diffusion. Various regimes in the statistical model exhibiting qualitatively distinct behavior are explored.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.866826
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    The formation of long carbon chain molecules during laser vaporization of graphite (1987)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 109 (1987), S. 359-363 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00236a012
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...