Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 3132-3134
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Two techniques for the integration of GaAs devices in multiple layer topologies are presented. An isotropic reactive ion etching technique is discussed for free-standing-metal interconnections within the same layer. A complementary approach for connections between different levels, based on chemically assisted ion beam etched ramps, is also described. In addition, both techniques can be used for device isolation.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.109105
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