ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Etching of a natural diamond octahedron was carried out at temperatures of 800 to 1400° C and at pressures of 15 and 40 kbar under controlled oxygen partial pressure in the range 10−17 to 104 atm by use of oxygen buffers. Well-defined etch pits of equiangular triangule outline were formed. When the results were plotted based on log P O 2 versus 1/T, reversal of the pit orientation clearly occurred on a boundary curve expressed by an equation, log P O 2=−9.0×104/T+63, where P O 2 (atm) and T (K) are oxygen partial pressure and temperature, respectively. Etch pits with the same orientation as an octahedral face were produced in a low temperature and high P O 2 region, and those with the opposite orientation, i.e. the same as for natural “trigon”, were produced in the other region.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00551683
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