ISSN:
1572-9540
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Implantations of F in crystalline Ge has been examined by the DPAD method. Two unique fluorine EFG sites are found. The results show a strong resemblance to similar data obtained earlier for Si, e.g., in either host an axial symmetric EFG oriented along the 〈111〉 crystal direction is observed, also the temperature dependences of site populations follow similar trends. A thorough comparison of the Ge and Si data is given.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02159798
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