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  • 1980-1984  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 21 (1980), S. 257-261 
    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undopedn-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E c −0.65eV andE c −0.74eV) and one grown-in hole trap level (E v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E c −∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 300 (1981), S. 1-6 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The excitation conditions where both direct Coulomb and shake-off processes concur to multiply ionize fluorineK andL shells were adopted in this experiment; 6MeV/amu p,α and C4+ impacts. The ion induced FKα satellites, measured for a series of F bearing compounds, showed significant chemical effects on their intensity distributions. Such effects are explained well with an FL-vacancy rearrangement model. Without any theoretical prediction, rearrangement probabilities or widths of FL shells were estimated by use of a reference compound with high ionicity, i.e. NaF. A linear relationship between FL widths and covalencies of compounds was found for a wide variety of fluorides. For the same compounds, the absolute values of the FL-vacancy rearrangement probabilities or the FL-shell widths obtained here were the same as those estimated from pure direct Coulomb and pure shake-off excitations, respectively. Other models than theL-vacancy rearrangement's are also discussed and eliminated.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 16 (1981), S. 927-934 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Continuous observation of dislocation motion on the specimen surface of IIb–VIb semiconducting compounds (CdS and CdTe) has been made using a scanning electron microscope (SEM) with the cathodoluminescence (CL) by use of a deformation apparatus installed in the SEM chamber. With the application of stress, SEM-CL patterns revealed an increasing density of dark spots that formed dark stripes along slip traces. For both CdS and CdTe crystals, regardless of the slip system involved, the dark spots corresponding to individual dislocations appeared in the SEM field without displaying their moving state and seldom disappeared, indicating that dislocations are immobilized after they travel a certain distance from the source with a high velocity. The investigation of slip-band growth in CdS showed that screw bands on the basal plane exhibit the photoplastic effect, whereas those on the prismatic plane do not, in accordance with the macroscopic deformation tests.
    Type of Medium: Electronic Resource
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