Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial growth of C60 and KI(001) surface (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1222-1223 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of C60 is observed for vacuum-deposited crystals on the KI(001) cleavage surface. When the KI surface is kept at 240 °C and the deposition rate is controlled to be less than a monolayer min−1 (∼0.5 nm min−1), rectangular platelike crystals of C60 grow epitaxially. Transmission electron micrographs and electron diffraction patterns of the crystals exhibit that the (002) planes of the face-centered cubic C60 crystal orient in parallel to the KI(001) surface. This epitaxial orientation is explained in terms of thec(2×2) commensurate lattice matching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112949
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Stable and efficient green light generation by intracavity frequency doubling of Nd:YVO4 lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 299-301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A green light source of 11 mW (maximum) has been obtained by frequency doubling in 3 at. % Nd:YVO4 lasers pumped by a single longitudinal mode laser diode (LD), for a 50 mW incident pumping power, with grating feedback optics. When the temperature of the LD was changed within the range of 23±10 °C, the oscillated wavelength of the LD remained unchanged, and the relative intensity noise of the green light was maintained to less than −140 dB/Hz (at 2.5 MHz).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110084
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2251-2253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaN single-crystal films were grown on (0001) plane sapphire substrates at 800 °C by metalorganic vapor phase epitaxy. By using such a high temperature for growth, the crystalline quality has been greatly improved. But a high nitrogen over pressure and high indium source flow rate were necessary to achieve significant indium incorporation during growth. For the first time, photoluminescence has been observed in InGaN, and near-band edge emission is seen in the photoluminescence at 77 K. From this photoluminescence, the dependence of a near-band edge emission on the indium mole fraction of InGaN has been investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106086
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    InAlAs/InGaAs metal-semiconductor-metal photodiodes heteroepitaxially grown on Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 751-753 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study performance and reproducibility of photodiodes (PDs) on Si in the long-wavelength region, InAlAs/InGaAs metal-semiconductor-metal PDs were fabricated on high-quality heteroepitaxial InP layers on Si substrates. A dark current of 0.5–2×10−8 A and a responsivity of 0.05–0.15 A/W were reproducibly obtained, at least at one of the ±5 V bias voltages. These dark currents and responsivity are similar to those of PDs with the same structure fabricated on InP substrates. The PDs on Si have pulse responses with full widths at half-maximum of 150–600 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111055
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Human B-Cell Clones Expressing Lupus Nephritis-Associated Anti-DNA Idiotypes are Preferentially Expanded without Somatic Mutation (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Scandinavian journal of immunology 37 (1993), S. 0 
    Details
    ISSN: 1365-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Human monoclonal anti-single/double-stranded (ss/ds) DNA anlibodies (NE-1 and NE-13) expressed cross-reactive idiotypes (Id), NE-1 Id, which have been delected on the lupus glomeruli-deposited anti-DNA antibodies. The nucleotide sequences of the variable regions of NE-1 and NE-13 clones were analogous except for one nucleotide difference in the Vk region. The VH and Vk gene segments of NE-13 clone were identical with germline genes VH4.21 and Vb(or Vb′). respectively. CDR3sof NE-l and NE-13 heavy chains were arginine rich and CDR1s contained an amino acid stretch. SGYY, the inverted sequence of YYGS. which was shared among CDR3s of several anti-DNA antibodies. Clonal frequency analysis using a limiting dilution method revealed that NE-1 Id-positive clones at precursor cell level increased in lupus patients. These findings suggest that some IgM anti-DNA clones which express NE-1 Id associated with lupus nephritis use germline genes without mutation and they may be preferentially expanded at the precursor cell levels as well as at the mature cell level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3083.1993.tb02569.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Fourier transform infrared spectroscopy of water on the hydroxylated zinc oxide surface (1992)
    s.l. : American Chemical Society
    Langmuir 8 (1992), S. 2598-2600 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00047a005
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Localized multiple neurofibromas (1992)
    Oxford, UK : Blackwell Publishing Ltd
    Clinical and experimental dermatology 17 (1992), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Two cases of localized multiple neurofibromas are reported. The patients had fairly large, closely grouped neurofibromas limited to a circumscribed part of the body, a very different clinical feature from segmental neurofibromatosis, but with otherwise had typical histopathological features. Possible aetiology is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2230.1992.tb00205.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Structure of K1.0Ti8O16 and K0.0Ti8O16 (1993)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 49 (1993), S. 838-841 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108768193004677
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Strong adsorption from highly dilute solution: adsorption of sodium dodecyl sulfate from saturated ammonium sulfate solution (1975)
    Springer
    Colloid & polymer science 253 (1975), S. 127-131 
    Details
    ISSN: 1435-1536
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: Zusammenfassung Es wurde eine Methode entwickelt, die adsorbierte Menge aus hochverdünnten Lösungen von oberflächen-aktiven Substanzen — Natriumdodecylsulfat in gesättigter Ammoniumsulfatlösung-aus Oberflächenspannungs-Konzentrationskurven zu berechnen. Ferner wurde aus diesen Daten die Oberflfichendruck(F)-Fläche pro Molekül(A)-Kurve konstruiert. Sie stimmt mit derjenigen über-ein, die unmittelbar an Natriumdodecylsulfatfilmen auf der Oberflache gesattigter Ammoniumsulfatlösungen gemessen wurde. Die berechnete Menge im Sattigungswert stimmt gut mit derjenigen dberein, die nach radioaktiver Methode gemessen wurde.
    Notes: Summary A method was devised to obtain a correct surface tension vs. equilibrium concentration curve for a very dilute solution of surface active substance, such as sodium dodecyl sulfate dissolved in an aqueous solution of saturated ammonium sulfate, where the decrease of the bulk concentration due to the adsorption is not negligible. Adsorption isotherm was obtained by applyingGibbs adsorption equation to the curve, and the pressure vs. area curve was plotted. The latter plot is in agreement with that directly measured for the spread film on saturated ammonium sulfate solution, the surface pressure of which was obtained by the extrapolation to time zero of the plot of log surface pressure vs. square root of time. The amount of calculated saturation value is in agreement with that directly measured by the radiotracer method. These agreements show the validity of the present method of obtaining surface tension and adsorption isotherms, together with the method of extrapolation to obtain the surface pressure vs. area curve for soluble film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01775677
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Automatic titration of reducing gases in inert gases using an oxygen pump-gauge (1990)
    Springer
    Journal of applied electrochemistry 20 (1990), S. 775-780 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract A computer-aided gas analyzing system with a zirconia oxygen pump-gauge was developed and used to measure a small amount of reducing gas in a flowing inert gas. The flowing Ar containing CO or CH4 was automatically titrated with oxygen by scanning the current of the oxygen pump; on-line titration data were analyzed by correcting for the response delay of the EMF sensor to the pump current. This scan method is very advantageous for a precise and rapid determination of the total oxygen demand (TOD) of the flowing gas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01094305
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...