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  • 1
    Electronic Resource
    Electronic Resource
    Unimolecular reactions and energy partitioning. Three- and four-centered elimination reactions of chemically activated 1,1,2-trichloroethane-d0-d1, and -d2 (1974)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 2166-2179 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100614a018
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison of Density Functional and MP2 Calculations on the Water Monomer and Dimer (1994)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 10089-10094 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100091a024
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    A Monte Carlo study of hot electron injection and interface state generation model for silicon metal-oxide-semiconductor field-effect transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5087-5094 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes a model which can predict the quantity and lateral distribution of hot-electron-induced interface states in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The results are obtained using an advanced Monte Carlo method, which incorporates two lowest conduction energy bands from pseudopotential calculations, coupled with an interface state generation model. The coupled model simulates transport-induced hot electron emission from Si into SiO2 and the subsequent generation of interface states in MOSFETs operating under realistic high-voltage stress conditions. The calculations explore the sensitivity of the channel electron energy distribution to various Monte Carlo parameters, such as impact ionization coefficients, self-consistent electron-electron interactions, and surface scattering. Within the validity of our treatments of these physical phenomena, it is shown that while the effects of Monte Carlo parameters on the energy distribution can result in uncertainties in the net interface state generation, quantitative studies may be allowed by using scaling principles. The interface state distribution obtained from the model agrees with experimental data from charge pumping measurements. The model also predicts that the interface state generation extends spatially beyond the range which is accessible by the charge pumping measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355752
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  • 4
    Electronic Resource
    Electronic Resource
    Quantized acoustic phonon modes in quantum wires and quantum dots (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4670-4675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Acoustic phonon modes in isotropic cubic media are derived for a number of quantum-wire and quantum-dot geometries of significant interest in nanoelectronics and optoelectronics. In each case, the mode amplitude is determined by requiring that the mode energy be given by that of the properly quantized phonon. For the case of cylindrical quantum wires and quantum dots with rectangular faces, the Hamiltonians for the deformation potential interactions are derived. These quantized acoustic modes and the associated deformation potential Hamiltonians provide a basis for modeling carrier-acoustic-phonon interactions in a variety of mesoscopic devices. Our new results supplement previous treatments of related piezoelectric effects in cylindrical quantum wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357305
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  • 5
    Electronic Resource
    Electronic Resource
    Theoretical calculation of longitudinal-optical-phonon lifetime in GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3905-3907 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anharmonic decay of longitudinal-optical (LO) phonons in zinc-blende semiconductors has been studied. Based on an approach in which the anharmonic crystal potential is estimated using the theory of elasticity, the lifetime of LO phonons via emission of two acoustic phonons is calculated as a function of lattice temperature and phonon wave vector. Application of this model to bulk GaAs shows an excellent agreement with available experimental data. Since the parameters employed in the model can be obtained experimentally, the approach provides a useful tool to investigate LO-phonon lifetimes in semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358498
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic properties behaviors in Fe88Zr7B4Cu1 nanocrystalline alloy prepared by different postanneal cooling rates : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6943-6945 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of cooling rate after annealing on the soft magnetic properties were investigated for an Fe88Zr7B4Cu1 alloy with nanoscale grain structure, which was prepared by melt quenching. As the cooling rate increased, the effective permeability improved and the remanence ratio, which indicates the orientation of magnetic anisotropy (degree of pair ordering), decreased. The increase of permeability and decrease of remanence ratio were considered to result from the suppression of the induced magnetic anisotropy. Furthermore, the variation of disaccommodation behaviors with cooling rate was investigated in the Fe88Zr7B4Cu1 nanocrystalline alloy. It was found that the value of D (intensity of disaccommodation) was a little higher for the samples obtained from the high cooling rate than that for the low cooling rate. This result can be explained by domain structure stabilization due to local induced magnetic anisotropy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356789
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  • 7
    Electronic Resource
    Electronic Resource
    Frequencies of confined longitudinal-optical phonon modes in GaAs/GaP short-period strained-layer superlattices (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6179-6183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linear-chain approximation is used to calculate the spectrum of confined longitudinal-optical (LO) phonon frequencies in short-period strained-layer superlattices. The frequencies for confined LO-phonon modes are reported explicitly for the case of GaAs/GaP short-period strained-layer superlattices grown in the 〈001〉 direction. These results are compared with the few existing experimental measurements for such superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345182
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  • 8
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of electron transport in gallium nitride (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1818-1821 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of an ensemble Monte Carlo simulation of the electron transport in gallium nitride (GaN) are presented. The calculation shows that intervalley electron transfer plays a dominant role in GaN in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. An analytic expression for the polar optical momentum relaxation time for phonon energies larger than the thermal energy is also derived. This expression applies to many wide-gap semiconductors, such as GaN and SiC, at room temperature since these semiconductors have large polar optical-phonon energies (on the order of 100 meV). The calculated mobility agrees well with the results of the Monte Carlo calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354787
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  • 9
    Electronic Resource
    Electronic Resource
    Construction of higher-moment terms in the hydrodynamic electron-transport model (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6197-6207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A critical step in the development of all hydrodynamic transport models (HTMs), derived from moments of the Boltzmann transport equation, is the introduction of accurate closure relations to terminate the resulting infinite set of macroscopic equations. In general, there are a number of resulting integral terms that are highly dependent on the form of the true electron distribution function. The so-called heat flux term is one very important higher-moment term that requires attention. Methods for the accurate construction of an improved heat-flux model are presented. In this construction, a higher-moments approach is combined with a unique definition of electron temperature (i.e., based upon an ansatz distribution) to investigate the effects of conduction-band nonparabolicity and distributional asymmetry. The Monte Carlo method has been used to evaluate the resulting model closures and to study microscopic electron dynamics. These investigations have identified an important relationship between a particular symmetric (i.e., thermal) component of the electron distribution function and the heat flow vector. This knowledge is important because all the parameters in the HTM must be closed (i.e., related to each other through a common set of system variables) before the technique can be accurately applied to the study of electron transport in semiconductor devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355189
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  • 10
    Electronic Resource
    Electronic Resource
    Reduction of interface phonon modes using metal-semiconductor heterostructures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2338-2342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on a simplified analysis of perfectly conducting metals, it has been suggested qualitatively that establishing metal-semiconductor interfaces at the heterojunctions of polar semiconductor quantum wells introduces a set of boundary conditions that dramatically reduces or eliminates unwanted carrier energy loss caused by interactions with interface longitudinal-optical (LO) phonon modes. In this article, it is theoretically demonstrated that comparable reductions in LO phonon scattering strengths may be achieved for metal-semiconductor structures with metal having realistic conductivities and Thomas–Fermi screening lengths.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353139
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