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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of GaAs grown on Si epitaxial layers on GaAs substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 220-225 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs has been grown on 9 and 18 A(ring) thicknesses of epitaxial Si which was grown on GaAs (100) substrates. The GaAs on Si interface was characterized by cross-sectional transmission electron microscopy. A 9 A(ring) thickness of Si on GaAs is pseudomorphic while 18 A(ring) of Si is relaxed. Antiphase domains (APDs) were observed to annihilate near the GaAs on Si interface. Annihilation ocurred within 100 A(ring) of the interface for the 9 A(ring) thickness of Si and around 1500 A(ring) for the 18-A(ring) Si case. From a detailed analysis of the APD shapes and sizes, we deduce that GaGa bonds are energetically favored in the {111} planes and that two separate APD annihilation mechanisms occur. The growth mode of epitaxial Si on GaAs was also studied by in situ high-energy electron diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347754
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  • 2
    Electronic Resource
    Electronic Resource
    Surface diffusion processes in molecular beam epitaxial growth of GaAs and AlAs as studied on GaAs (001)-(111)B facet structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4138-4144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mechanisms of molecular beam epitaxy have been investigated for GaAs and AlAs by growing and analyzing the shapes of facet structures consisting of an (001) top surface and two (111)B side surfaces. It is found that all of the Ga flux on the three facet planes is incorporated into the film, but the growth rates on (111)B and (001) depend strongly on the As flux and are mainly determined by the diffusion of Ga ad-atoms between the two planes. In contrast, the diffusion of Al is found to be almost negligible, irrespective of the As flux. By analyzing the shape of the facet, the diffusion length, λ, of Ga on a (001) surface is estimated to be about 1 μm at 580 °C, while that of Al is about 0.02 μm. On (111)B, λ of Ga is found to be several μms. The reflectivity of diffusing Ga atoms is found to be far less than 1 for the (001)-(111)B boundary, and almost unity at facet boundaries where the (111)B side surfaces are bound by the (11¯0) side walls.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357364
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfaces (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2788-2790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Despite the valence difference across the junction, it has been shown that ZnSe/GaAs epilayer/epilayer interface state densities can be reduced to values comparable to the (Al,Ga)As/GaAs interface. We have previously reported a transmission electron microscopy study indicating that ZnSe/GaAs structures exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc-blende Ga2Se3. In this letter we describe a procedure whereby an interfacial layer can be deliberately introduced prior to nucleation of ZnSe. In situ x-ray photoelectron spectroscopy is used to study the nature of the bonding at the interfacial layer. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from a separately grown Ga2Se3 epilayer, clearly indicates the same Se bonding characteristic for the Se-reacted interfacial layer and the Ga2Se3 epilayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104762
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  • 4
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1988-1990 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe films were grown in both the (211) and (133) orientations on GaAs(211)B substrates by molecular beam epitaxy. The orientation of the epitaxy is dependent on the thermal cleaning process. Studies of these films included in situ reflected high-energy electron diffraction, x-ray double-crystal diffractometry, transmission electron microscopy, and photoluminescence, which revealed high quality for both CdTe growth orientations, and especially for the CdTe(133). The lattice of the CdTe(211) growth tilts 3° with respect to its GaAs(211) substrate about the CdTe[01¯1]//GaAs[01¯1] coincidence axis. The CdTe(133) has no tilt with respect to its substrate, and its coincidence axes are CdTe[01¯1]//GaAs[01¯1] and CdTe[61¯1¯]//GaAs[1¯11].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105041
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  • 5
    Electronic Resource
    Electronic Resource
    An extreme ultraviolet radiation source for the simulation of the ionosphere (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1721-1726 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An extreme ultraviolet (EUV) radiation source for space simulation of plasma and other related phenomena in the laboratory has been developed. A total of forty-eight small EUV lamps are put together to give a radiation diameter of more than 30 cm. The intensity of this lamp at the hydrogen Lyman-alpha line is more than twenty five times stronger than sunlight at the same wavelength and at a distance of about 30 cm from the source. The source is capable of emitting EUV radiations from 110 nm to the longer wavelengths, either continuously or in pulses, and has been used to produce a plasma of 105 els/cm3 when the pressure of NO gas in the chamber was 10−4 Torr. Since this plasma is extremely calm and fairly Maxwellian, it can be used to study the electron collection mechanism of a probe in a collision dominant medium. The source was also utilized to study the interaction between vibrationally excited nitrogen molecules and thermal electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142412
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  • 6
    Electronic Resource
    Electronic Resource
    Estimation of electronic confinement in a quantum dot from envelope modulation of Coulomb blockade oscillations (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 875-877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Envelope modulation of Coulomb blockade oscillations has been observed in the conductance of a semiconductor quantum dot weakly connected to two reservoirs through tunneling barriers and subjected to magnetic fields. Although the number of conductance peaks per modulation period has been reported to be constant, we find that in moderate magnetic fields the number of peaks per period decreases one by one as gate voltage is changed. This results from the electronic depopulation of a single Landau level per modulation period. Comparing this result with calculated energy levels, the strength of electronic confinement is estimated to be 2.2 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112952
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  • 7
    Electronic Resource
    Electronic Resource
    Secondary electron emission from Si-implanted GaAs (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1404-1406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the implanted Si into GaAs on the secondary electron yield was investigated using cross-sectional scanning electron microscopy. In the case of the isothermal annealing at 800 °C for 30 min, the yield was enhanced for the samples implanted at 150 keV with higher doses than 1×1014 cm−2 above which the activation efficiency of the implanted Si went down rapidly. The annealing temperature dependence also showed the enhancement of the yield for the samples with less activation efficiency. Hence, it was suggested that the yield was increased by the defects that reduced the activation efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111897
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  • 8
    Electronic Resource
    Electronic Resource
    Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)-(111)B facet structures for edge quantum wires (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 700-702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallographic selectivity of molecular beam epitaxial growth of GaAs on mesas consisting of a (001) surface and (111)B facets is studied systematically. It was found that the growth rate on (111)B facets can be drastically reduced to ∼1/30 of the growth rate on (001) surface by the reduction of As flux on the (111)B facets. This enhanced selectivity results from the enhanced intersurface migration, and strongly indicates a feasibility of forming microheterostructures needed for the fabrication of edge quantum wires on (001)-(111)B mesas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105370
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  • 9
    Electronic Resource
    Electronic Resource
    Origin of dual epitaxy in the growth of CdTe on (2¯1¯1¯) GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1372-1374 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The atomic structure of the (1¯3¯3¯)CdTe/(2¯1¯1¯)GaAs interface is analyzed by high resolution transmission electron microscopy in order to elucidate the origin of the dual epitaxy in the growth of CdTe on (2¯1¯1¯)GaAs by molecular beam epitaxy. The analysis shows that the lattice mismatch at the interface is accommodated by a novel mechanism, which occurs with the combination of the 14.6% lattice mismatch between CdTe and GaAs and one wurtzite type bond sequence on the (2¯1¯1¯) substrate surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107294
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  • 10
    Electronic Resource
    Electronic Resource
    Modulation of one-dimensional electron density in n-AlGaAs/GaAs edge quantum wire transistor (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2552-2554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An array of AlGaAs/GaAs edge quantum wires (EQWIs) with an effective width of 80 nm was successfully prepared on a (111)B microfacet structure on a patterned substrate by molecular beam epitaxy. By forming a gate electrode on the wires, field effect transistor action has been successfully demonstrated. The conductance of the wire measured in magnetic fields has exhibited a clear Shubnikov–de Haas (SdH) oscillation, and its Landau plot shows a characteristic nonlinearity caused by the magnetic depopulation of one-dimensional (1D) subbands. It has been found that as the gate voltage decreases, the SdH peaks shift systematically toward lower magnetic fields, indicating a successful modulation of 1D electron density in the EQWI.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111571
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