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Restwiderstand von Bleischichten nach Implantation von Manganionen (1971)

Geerk, J. ; Heim, G. ; Kessler, J.

Springer

The European physical journal 242 (1971), S. 86-92

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ISSN: 1434-601X

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract The method of ion-implantation is applied to doping thin lead films with small amounts of manganese. The incident ion intensity is integrated to determine the concentration of magnetic impurities. A marked increase in film resistivity is caused by radiation damage induced in the host lattice and by resonance scattering of conduction electrons on the magnetic impurity sites. Both effects can be observed separately.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF01395381

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