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  • 1970-1974  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 27 (1971), S. 2341-2345 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 4 (1974), S. 41-45 
    ISSN: 1432-0630
    Keywords: Positron lifetime ; Semiconductor dislocation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron lifetime measurements have been performed inn-type andp-type germanium single crystals deformed by compression. The results are compared with those of deformed GaAs single crystals obtained by the authors previously. In bothn andp-type germanium the lifetime τ1 and its intensityI 1 decreased with deformation. Using the trapping model, the trapping rates of positrons by dislocations are obtained, which in turn gave the cross width of the dislocation as 20.0 Å and 8.2 Å forn-type andp-type germanium, respectively. In terms of Read's model the fraction of the dangling bonds occupied by electrons is obtained to 0.26 in then-type germanium. This value was smaller than those obtained forn-type GaAs, i.e., 0.46 and 0.50 for Ga- and As-dislocation, respectively. It is found that doping causes the trapping of positrons. Inp-type germanium the fractionf was determined to 0.25 in terms of Schröter and Labusch's model.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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