ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract When a collimated beam of light is reflected from an etched crystal surface or an epitaxial deposit, the pattern formed by this reflection provides information on the microscopic morphology of the reflecting surface. Using a He/Ne laser as a source of high-intensity collimated light, both SiC etched in CIF3 and cubic CdS grown epitaxially on GaP have been examined. Certain regions of the SiC were found to give rise to diffraction effects in the resulting reflectrogram. The epitaxial layer of CdS was found to show a threefold symmetry indicative of a {111} deposit and a negligible diffraction effect.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00562953
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