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  • 1955-1959  (5)
  • 1
    facet.materialart.
    Unknown
    Worcester, Mass. : Periodicals Archive Online (PAO)
    Journal of Social Psychology. 47:2 (1958:May) 373 
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    facet.materialart.
    Unknown
    London, etc. : Periodicals Archive Online (PAO)
    British journal of psychology. 50 (1959) 333 
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 155 (1959), S. 465-471 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The variation of dielectric constantɛ of pyrolusite (sintered polycrystalline ore of MnO2) with temperature, frequency and voltage has been studied within the frequency range 200 c/s to 10 kc/s. The samples studied show a very high value of dielectric constant ≈ 105. Theɛ-temperature curve indicates thatɛ attains a maximum value at a certain temperature. The temperature at whichɛ attains a maximum value appears to vary from sample to sample. At higher temperatures (i.e. higher than that at whichɛ attains a maximum value),ɛ decreases with temperature asɛ=c/(T−Θ). The dielectric constant is dependent on the frequency; it has a higher value at lower frequencies. The applied voltage across the specimen has a marked influence on the dielectric constant, which increases rapidly with voltage. A capacity with pyrolusite as dielectric shows a hysteresis loop (electrical). The dielectric loss factor tanδ is found to depend on temperature, frequency and voltage. Tanδ attains a maximum value at lower range of frequencies between 300 c/s to 700 c/s, for a given voltage, and temperature. This indicates the existence of dielectric relaxation for these specimens. Tanδ also varies exponentially with temperature. Samples of pyrolusite studied show a piezo electric effect as well. The electromechanical coupling coefficient is found to vary from 2·4×10−5 to 8·8×10−5 e.s.u/ dyne. Slabs cut from the samples of pyrolusite mineral were found to control the frequency of a Hartley oscillatory circuit. The resonant frequency range was found to increase as the thickness of the slab is reduced.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 147 (1957), S. 271-276 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Then-type diode characteristics of natural galena change over top- type after heat treatment in H2S. These galena surfaces treated with H2S were found to show transistor action and photovoltaic effects also. A study of the cleaved surfaces of such galena crystals after heat treatment in H2S revealed that the spreading resistance Rs increases upto a certain depth, below the outer surface indicating the existence of a high resistivity layer. On removing surface layers by carefully scraping with sand paper (a) the rectifying characteristics improved, and (b) photovoltaic effects could be observed. Under these conditions transistor action with current gain=0.83 and voltage gain of about 4 could be obtained.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 151 (1958), S. 345-350 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electrical conductivity σ of the specimens is found to obey a relation of the type σ=C exp (−B/k T) over a temperature range 300 to 500° K whereC andB are constants. The experimentally determined values ofB and C are (1)B≈1490 to 2199 (2)C ≈ 0·72 × 10−3 to 4·9 × 10−3 ohms−1 cms−1. The value of the activation energy determined from the values ofB are ≈0·13 to 0·19 e.V. In A.C measurements σ is found to vary with voltage applied across the specimen at a given temperature. The i−V characteristics of metal point semi-conductor contacts are non-linear symmetrical curves and are strongly temperature dependant. The value of the Hall constant (−0·14 cm3/coul) yields carrier concentration as 4·3 × 1019/cm3, and mobility 1·2 cm2 volt−1 second−1. Δϱ/ϱ for the specimen is found to vary asH 2 where ϱ is the resistivity andH the value of magnetic field. The specimens develop a thermo-electric power of magnitude 200 μV/K to 500 μV/K which is fairly constant over the temperature range 300 to 800° K. The sign of the thermo-e.m.f. and of the Hall constant indicate that the specimens are “n” type.
    Type of Medium: Electronic Resource
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