ISSN:
1434-6079
Keywords:
36.40.+d
;
34.50.Lf
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Photoionization thresholds of Si n (n=2−40) were examined by vacuum UV radiation (5.7–8.5 eV) generated by stimulated Raman scattering of narrow-bandwidth 193-nm radiation in high pressure hydrogen and deuterium gases. A strong threshold energy dependence on cluster size is observed, featuring major maxima at 10 and 20. The magic behavior atn=10 is consistent with the results of the photofragmentation and CID experiments reported previously.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01425665
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