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Rapid growth of ultra thin SiO2 films by a large-area electron beam (1989)

Sun, D. C. ; Yu, Z. Q. ; Li, F. M. ; [weitere]

Springer

Applied physics 48 (1989), S. 567-571

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Details

ISSN: 1432-0630

Schlagwort(e): 52.80-s ; 79.20Kz ; 81.60-j ; 68.55-b

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Rapid growth of ultra thin oxide films (40–180Å) of silicon using a low-energy large-area electron beam has been performed with a pressure ratio of 3∶1 (O2/He) and a total pressure of 0.5–0.7 Torr. A higher oxidation rate of about 625Å2/s is found for shorter irradiation time of the e-beam in the e-beam dose range 0.75–3 Coulomb/cm2 and at lower substrate temperature 540–740°C. AES and XPS demonstrated a rapid electron-stimulated oxidation process of the Si surface. For the grown ultra thin oxide films, C-V characteristics, dielectric strength, uniformity of the film over the entire Si wafer and its thickness as a function of the processing time of the e-beam are also presented.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00617858

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