ISSN:
1432-0630
Keywords:
61.16 Bg
;
44.30
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Short laser pulses (wavelength 337 nm, duration time 0.5 ns) are used for thermal processing of ultra thin nanoporous silicon layers (UPSL) prepared electrochemically on n- and p-type Si(1 1 1) in aqueous NH4F solution. The theoretical threshold for melting (W m ) of UPSL is about 0.01 J/cm2. This is about one order of magnitude belowW m of crystalline silicon. A selective laser induced melting regime can be realized for which an UPSL is practically completely molten on the top of an unmolten crystalline silicon substrate. Investigations with scanning and high resolution transmission electron microscopy show the formation of crystalline silicon spheres with diameters in the range of some of ten nm in this regime.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01571675
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