ISSN:
1432-0630
Schlagwort(e):
61.70
;
78.30
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract The resistivity of boron-doped silicon can be significantly increased by polishing such material with an appropriate amine- and copper-containing slurry. This effect is ascribed to a passivation of the boron acceptors by a defect produced or introduced by the polishing process. Three new, so far unknown localized vibrational modes at 691, 720, and 1038 cm−1 are observed in highly boron-doped silicon samples after such a polishing treatment. Two of these localized modes can be identified as due to a boron-containing defect. High concentrations of copper found in the samples after appropriate polishing indicate a participation — either directly or indirectly — of this metal in the passivation process.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00324489
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