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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 21 (1980), S. 257-261 
    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undopedn-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E c −0.65eV andE c −0.74eV) and one grown-in hole trap level (E v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E c −∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.
    Type of Medium: Electronic Resource
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