ISSN:
1432-0630
Keywords:
61.16Di
;
61.70Br
;
61.80Lj
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Cross-sectional high resolution transmission electron microscopy has been used to obtain direct information on the in-depth radiation damage distribution of weakly damaged GaAs by Si-ion implantation. A comparison is made between the experimental data and the calculated (using TRIM computer simulations) deposited energy by nuclear stopping for the same conditions. In particular a diffusion zone, with 200–300 Å width, of high point defect concentration beyond the damage peak is detected. These point defects are interpreted as As interstitials. By direct observation, information concerning the damage- and radiation-enhanced diffusion in implanted III–V compound semiconductors is obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00939262
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