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  • 61.70N  (1)
  • 66.30jt  (1)
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  • 1
    ISSN: 1432-0630
    Schlagwort(e): 66.30jt ; 61.70Wp
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Using the hydrogen neutralization of the boron acceptor, the diffusion of hydrogen is investigated in the temperature range 20 °–160 °C. The hydrogenation is performed by low-energy implantation. We observe a fast initial hydrogen migration, followed by a long-time diffusion phase that is described by an effective diffusion coefficientD eff=D 0 eff exp(−E a/kT) withD 0 eff–cm2s−1 andE a=(0.83±0.05) eV. No deeper hydrogen migration is detected for implantation times longer than − 30 min. Our data are explained by the build-up of a large amount of molecular hydrogen beneath the surface, which strongly hinders the transfer of the implanted hydrogen to the bulk. The thermal reactivation kinetics of the neutralized boron show a rapid initial step followed by a longtime thermally activated second order phase, which is limited by the recombination of hydrogen into molecules.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 49 (1989), S. 233-237 
    ISSN: 1432-0630
    Schlagwort(e): 61.16D ; 61.70N ; 81.40E ; 61.50
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We have studied the influence of conventional and rapid thermal treatments at 850°C for 30 min and 10 s, respectively, on the recombination activity of theε9,ε13 (P-type) andε25 (N-type) grain boundaries in silicon. The analyses were made by scanning electron microscopy (SEM) working in the electron beam induced current mode (EBIC) and completed by minority carrier diffusion length measurements. The main result obtained from this study shows the importance of the rapid thermal process as a suitable thermal treatment for polycrystalline materials.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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