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CMOS 1/f noise: n-channel versus p-channel (1990)

Murray, D. C. ; Carter, J. C. ; Evans, A. G. R.

Springer

Applied physics 51 (1990), S. 337-339

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ISSN: 1432-0630

Keywords: 73.40Q ; 61.70T

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract This note reports on the noise of CMOS devices. It is shown experimentally that a weak boron threshold implant (∼1012 cm−3) can influence the 1/f noise levels. For wafers with threshold adjustment the p-channel noise decreases whilst the n-channel noise increases. The changes in the n/p noise ratio with/without threshold implantation are predicted using a simple model in conjunction with carrier profile simulations.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00324315

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