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Digitale Medien

Optimization of carbon incorporation in GaAs during molecular beam epitaxial growth (1996)

Nörenberg, H. ; Mazuelas, A. ; Hagenstein, K. ; [weitere]

Springer

Applied physics 62 (1996), S. 459-461

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Details

ISSN: 1432-0630

Schlagwort(e): 68.55.Bg ; 64.75. + g ; 73.61.Ey

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Carbon-doped GaAs with dopant concentrations up to about 1020 cm−3 has been grown by molecular beam epitaxy. Above a critical carbon concentration, which depends on the deposition parameters, the surface deteriorates and loses its mirror-like appearance. From X-ray diffractometry and scanning electron microscopy, a diagram is established separating two areas with rough and mirror-like surface morphologies. The electrical properties as well as the morphology of GaAs : C can be simultaneously improved by a careful adjustment of the deposition parameters according to this diagram.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01567117

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