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  • Digitale Medien  (2)
  • 68.55  (2)
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  • Digitale Medien  (2)
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  • 1
    Digitale Medien
    Digitale Medien
    A slow positron lifetime study of the annealing behaviour of an amorphous silicon layer grown by MBE (1995)
    Springer
    Applied physics 61 (1995), S. 71-74 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 78.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We have studied MBE grown amorphous silicon, which was recrystallized at different temperatures for one hour, with a pulsed positron beam. A positron lifetime of 538±10 ps in the as-grown state is attributed to microvoids containing at least 10 vacancies. An incompletely recrystallized sample annealed at 500°C shows an additional long lifetime from ortho-positronium (o-Ps) pick-off annihilation. The o-Ps component disappears for samples, recrystallized at 700°C and above, and the defect lifetime steadily decreases with higher annealing temperature until a value of 310 ps is reached for the layer annealed at 1200°C. This value is explained by positron trapping at dislocations or small vacancy defects stabilized by dislocations or impurities.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01538214
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  • 2
    Digitale Medien
    Digitale Medien
    Investigations of positron lifetimes in InP with a pulsed positron beam (1995)
    Springer
    Applied physics 61 (1995), S. 321-324 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 78.70 ; 68.55 ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Indium Phosphide layers grown by gas source Molecular Beam Epitaxy, (MBE) have been studied by positron lifetime spectroscopy using the recently modified pulsed positron beam in Munich. The as-grown samples are known to be phosphorous rich and contain a high concentration of vacancy-type defects. On annealing, phosphorous precipitates are formed and the concentration of free volume defects increases. Positron lifetime spectroscopy has identified the grown in defects to be indium vacancies at a concentration around 1018cm−3. The dominant defects after annealing exhibit a positron lifetime characteristic of divacancies and are present at concentrations in excess of 5×1019cm−3.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01538197
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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    Artikel (Nationallizenzen)
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