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Digitale Medien

Atomic layer molecular beam epitaxy growth of InAs on GaAs substrates (1989)

Ruiz, A. ; González, L. ; Mazuelas, A. ; [weitere]

Springer

Applied physics 49 (1989), S. 543-545

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Details

ISSN: 1432-0630

Schlagwort(e): 68.55.+b

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract InAs layers with thickness ranging from 0.1 to 2.5 μm have been grown directly on highly mismatched (7.4%) (001) GaAs substrates by atomic layer molecular beam epitaxy (ALMBE). This growth method, based on the modulated deposition of one or both component species, provides InAs layers with excellent flat morphology, independently of the total thickness. A detailed study of the evolution of the electron diffraction (RHEED) pattern indicates that a complete decoupling between the InAs epitaxial layer and the GaAs substrate is reached in less that 10 monolayers. Evidence is obtained that layer-by-layer nucleation takes place from the beginning of the growth.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00617022

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