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  • 1
    Electronic Resource
    Electronic Resource
    On the density of localized levels in amorphous silicon (1979)
    Springer
    Applied physics 18 (1979), S. 427-429 
    Details
    ISSN: 1432-0630
    Keywords: 71.20 ; 71.55 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The distribution of the localized levelsg(ε) in the forbidden gap of amorphous silicon is calculated from the dependence of the Fermi energy on the doping concentration of phosphorus donors and boron acceptors. The minimum ofg(ε) is verified by this method to be in the order of 1017 to 1018 cm−3eV−1, whereas the maxima ofg(ε), which have been reported in the literature, are not confirmed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899699
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Defect-level analysis of semiconductors by a new differential evaluation ofn(1/T)-characteristics (1979)
    Springer
    Applied physics 19 (1979), S. 307-312 
    Details
    ISSN: 1432-0630
    Keywords: 71.20 ; 71.55 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new method for the defect-level analysis of extrinsic semiconductors is described. Provided that the defect-level concentration is not too large and the temperature is not too low, the Fermi levelE F is shifted with increasing temperature from a position near the conduction (or valence) band towards the middle of the forbidden gap monotonously. Thus majority carriers are emitted into the conduction (or valence) band from the defect levels successively. If for a small increment of the temperature the Fermi levelE F is shifted by ΔE F and the concentration of free majority carriers is increased by Δn, then the ratio Δn/ΔE F is a measure of the defect-level concentration within ΔE F . Furthermore we discuss how this analysis is influenced by additional defect levels outside the range over which the Fermi energy can be shifted by variation of the temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900474
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of localized level energies by a statistics of the fermi-level (1977)
    Springer
    Applied physics 12 (1977), S. 379-381 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies agree very well with most of the values obtained with different methods by other authors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886040
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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