ISSN:
1432-0630
Keywords:
71.55
;
72.20.Jv
;
72.40
;
72.80.Ey
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Time-resolved photoconductivity measurements have been used to characterize electron traps in wide-gap n-HgO0.3Cd0.7Te for the first time. The characterization was made possible by combining the time-resolved photoconductive data with the analytical method conventionally used in DLTS spectroscopy. Two electron traps were found in the band gap with 61 meV and 79 meV below the conduction band edge, their concentrations are 1.1×1013 cm−3 and 5.8×1011 cm−3, respectively. Compared with DLTS spectroscopy, this characterization method markedly simplifies sample preparation and experimental procedure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00331781
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