ISSN:
1432-0630
Keywords:
71.55
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract A useful technique of determining the energy levels and the spatial density distributions of multiple electron traps in semi-conductor has been developed using the time-resolved measurement of the Schottky barrier junction capacitance, and this technique has been applied to characterize the electron traps inn-GaAs. In the present technique, the energy levels are determined from single scan of temperature, and the density distributions are calculated from a set of capacitance-voltage relationships. Four traps which lay at 0.39, 0.73, 0.79, and 0.58 eV below the conduction band edge were observed in boat grown or vapor phase epitaxially grown crystals. Many layers which were obtained by a vapor phase epitaxial growth system with N2 carrier gas were measured and it was found that almost all of them include the 0.73 eV and the 0.79 eV trap with the density between 1×1013 and 2×1015 cm−3.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00890712
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