ISSN:
1432-0630
Keywords:
71.55.Fr
;
72.80.Cw
;
71.45.Gm
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The free charge carrier concentration as a function of the reciprocal temperature and the doping level [p(1/T)- andp(C)-characteristics] is calculated from the neutrality equation of a semiconductor containing positive or negativeU centers. The typical exponential laws and power laws of thep(1/T)- andp(C)-characteristics are given both for positive and negative correlation energy of the bound charge carrier pairs. Furthermore, the characteristics are evaluated differentially, in order to obtain criteria for the presence of negativeU centers in semiconductors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01197545
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