ZIB

Treffer pro Seite

Treffer 1 - 1 | 1 Treffer

Sortierung

Digitale Medien

Mismatch and electron mobility in MBE GaxIn1−xas epitaxial layers on InP substrates (1983)

Massies, J. ; Sauvage-Simkin, M.

Springer

Applied physics 32 (1983), S. 27-30

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1432-0630

Schlagwort(e): 61.70Jc ; 72.20Fr ; 81.15EF

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Composition inhomogeneity in nearly matched epilayers of the ternary semiconductor alloy GaxIn1−xAs (x close to 0.47), grown by molecular beam epitaxy (MBE) on (001) InP substrates is correlated to variation of the lattice mismatch by x-ray imaging and local diffractometry. Misfit dislocations are shown to develop in areas of large misfit (above 2 × 10−3) and are at the origin of a severe degradation of the electron mobility: an increase by a factor of about 4 in the intrinsic misfit (2.3 × 10−3 compared to 0.6 × 10−3) results in a 35 % reduction of the 77 K electron mobility.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00626130

Permalink

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

Treffer 1 - 1 | 1 Treffer