ISSN:
1432-0630
Keywords:
72.40
;
85.30
;
85.60
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The effect of signal-modulated optical radiation on the characteristics of a GaAlAs/GaAs MODFET has been studied analytically. It is found that the offset voltage increases with modulation frequency and the effect of frequency is negligible above 5 MHz. The drain-source current decreases with increase in signal frequency at a constant radiation flux density, doping concentration and drain-source voltage. Studies on sheet concentration and transconductance also show that the signal frequency has a significant effect upto a certain modulation frequency (≲5 MHz) above which the effect of frequency is insignificant.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324352
Permalink
