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Digitale Medien

Diffusion of deuterium in GaAs from a molecular gas source (1988)

Svob, L. ; Grattepain, C. ; Marfaing, Y.

Springer

Applied physics 47 (1988), S. 309-311

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Details

ISSN: 1432-0630

Schlagwort(e): 72.80 E ; 66.30

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract It is shown for the first time that deuterium can diffuse into GaAs from a gaseous source. Experiments performed at 500° C show two-component diffusion profiles with diffusion coefficients in the range 10−15−4×10-1cm2s−1 depending on the conductivity type of the samples. These diffusion coefficients are considerably lower than those determined after RF plasma hydrogenation. Such a slow diffusion process is related to the reaction of molecular deuterium with the sample surface leading to the dissociation of the deuterium molecules.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00615937

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