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Digitale Medien

Studies of the promising material CoSi2 on GaAs substrates (1994)

Jin, G. ; Weide, C. ; Hsu, C. C.

Springer

Applied physics 59 (1994), S. 335-337

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Details

ISSN: 1432-0630

Schlagwort(e): 68.60.Dv ; 68.55.Jk ; 73.40.Ns ; 73.30

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract The thermal stability of CoSi2 thin films on GaAs substrates has been studied using a variety of techniques. The CoSi2 thin films were formed by depositing Co(500 Å) and Si(1800 Å) layers on GaAs substrates by electron-beam evaporation followed by annealing processes, where the Si inter-layer was used as a diffusion/reaction barrier at the interface. The resistivity of CoSi2 thin films formed is about 30 μΩ cm. The Schottky barrier height of CoSi2/n-GaAs is 0.76 eV and the ideality factor is 1.14 after annealing at 750° C for 30 min. The CoSi2/GaAs interface is determined to be thermally stable and the thin film morphologically uniform on GaAs after 900° C/30 s anneal. The CoSi2 thin films fulfill the requirements in GaAs self-aligned gate technology.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00348240

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