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  • 73.40.Ty  (3)
  • 1
    Electronic Resource
    Electronic Resource
    The coalescence of silicon layers grown over SiO2 by liquid-phase epitaxy (1993)
    Springer
    Applied physics 57 (1993), S. 441-448 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Jc ; 81.10.Dn ; 73.40.Ty
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The coalescence of epitaxial silicon layers which are grown laterally over oxidized and patterned Si substrates is studied using various techniques of transmission electron microscopy (TEM). The epitaxial layers, the seam of coalescence and lattice defects formed by the coalescence are characterized. The epitaxial layer as a whole is found to be bent with respect to the substrate. Such misorientations, together with facetting of the growth fronts of the coalescing layers, may lead to the formation of solvent inclusions, dislocations and stacking faults at the seam of coalescence. However, under favourable conditions, the seam is found to be entirely defect-free.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331784
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    The coalescence of silicon layers grown over SiO2 by liquid-phase epitaxy (1993)
    Springer
    Applied physics 57 (1993), S. 249-254 
    Details
    ISSN: 1432-0630
    Keywords: 68.55.Df ; 73.40.Ty
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have investigated by liquid-phase epitaxy (LPE) the coalescence of defect-free silicon-on-insulator (SOI) layers. The SOI lamellae grow out laterally from neighbouring seeding windows and spread over the SiO2. In our study, the seeding window edges are straight. The long window edges are parallel and extend in the (111) substrate plane in $$[11\bar 2]$$ direction. Coalescence of SOI lamellae takes place without the formation of defects whenever it begins at one point and then proceeds in directions parallel to the longer edges of the windows in a “zip”-like mechanism. Defect-free coalescence seams reach lengths of up to 150 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332598
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Dislocation generation in silicon grown laterally over SiO2 by liquid phase epitaxy (1991)
    Springer
    Applied physics 53 (1991), S. 317-323 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Jc ; 81.10.Dn ; 73.40.Ty
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Epitaxial lateral overgrowth (ELO) on thermally oxidized and patterned (111) Si is effected by liquid phase epitaxy (LPE). It produces Si layers spreading out on the amorphous SiO2 which are either perfectly grown defect-free or, coexisting, defective layers containing dislocations. High voltage electron microscopy of the defective layers reveals regular arrangements of the dislocations which result from glide and multiplication processes governed by the elastic interactions between the dislocations. The nucleation of the first dislocations during the ELO process is attributed to a slight warping of the substrates. A corresponding bending of the epitaxial layer induces mechanical stress, which may exceed the critical value at the oxide edges of the seeding windows where the first dislocations nucleate. The characteristics of the dislocation arrangements and lattice imaging results support this model. Suggestions are made for ways to reduce stress and, thus, avoid dislocation formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00357194
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    Paper (German National Licenses)
    Fulltext
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