ISSN:
1432-0630
Keywords:
73.40Q
;
61.70T
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract This note reports on the noise of CMOS devices. It is shown experimentally that a weak boron threshold implant (∼1012 cm−3) can influence the 1/f noise levels. For wafers with threshold adjustment the p-channel noise decreases whilst the n-channel noise increases. The changes in the n/p noise ratio with/without threshold implantation are predicted using a simple model in conjunction with carrier profile simulations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324315
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