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Evidence of very strong inter-epitaxial-layer diffusion in Zn-doped GaInPAs/InP structures (1995)

Schubert, E. F. ; Downey, S. W. ; Pinzone, C. ; [weitere]

Springer

Applied physics 60 (1995), S. 525-527

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Details

ISSN: 1432-0630

Schlagwort(e): 66.30.Jt ; 71.55.-i ; 73.61.Ey

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Zn-doped InP and GaInPAs layers were grown by OrganoMetallic Vapor-Phase Epitaxy (OMVPE). The epitaxial films consist of a primary GaInPAs/InP epitaxial layer and a secondary InP/GaInAs epitaxial layer. We present evidence that the redistribution of Zn acceptors in the primary epitaxial layer is strongly influenced by the Zn doping concentration in the secondary epitaxial layer. Rapid redistribution of Zn acceptors in the primary epitaxial layer occurs if the Zn doping concentration in the secondary epitaxial layer exceeds a critical concentration ofN Zn≅3×1018cm−3. The influence of the growth temperature on this effect is also presented.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01538523

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