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  • 1
    ISSN: 1090-6487
    Keywords: 74.50.+r ; 74.25.Fy ; 74.72.Bk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract An experimental investigation is made of the subharmonic Shapiro steps observed on the I-V curves of high-T c superconductor Josephson junctions and on the bias-voltage dependences of the rf noise and detector response when the junctions are subjected to external submillimeter radiation. Structures of this type are ordinarily described by a nonsinusoidal current-phase relation, which is why subharmonic steps appear. Numerical modeling of the processes occurring in a Josephson junction by means of a simple current-phase relation, as in the case of an SNS junction, gives good agreement with experiment. The width of the characteristic Josephson generation line of the junction was estimated on the basis of the noise dependences and the selective detector response. The width can be explained by taking into account the shot noise of the tunneling component of the conductivity. A model of the conductivity of a high-T c superconductor Josephson junction, consisting of a tunnel junction with microshorts possessing metallic conductivity, is discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of superconductivity 7 (1994), S. 767-771 
    ISSN: 1572-9605
    Keywords: Tl cuprates ; thin films ; ex-situ thin film processing
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Anex situ process has been developed to produce thin superconducting Tl2Ba2CaCu2O8 films. The properties of films grown on different substrates using different annealing regimes were studied. Critical temperatures of 103–107 K were measured on films prepared in a broad range of annealing temperatures on SrTiO3, LaAlO3, and Y-ZrO2 substrates. A critical current density,J c, of 2×106 A/cm2 at 77 K was measured on LaAlO3. Film morphology was studied by SEM, AFM, and STM.
    Type of Medium: Electronic Resource
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