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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    JETP letters 69 (1999), S. 386-391 
    ISSN: 1090-6487
    Keywords: 75.30.Vn ; 72.20.My
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Studies of a classical III–V semiconductor (InSb) doped with 3d magnetic ions (Mn2+, having a localized spin S=55/2) reveal some unexpected transport properties. It is found that the transition from the metallic to the low-temperature insulator phase occurs at an impurity concentration N Mn∼N cr=2× 1017 cm−3 and a temperature T〈T cr∼1 K. Under these conditions a giant negative magnetoresistance arises. The experimental results can be explained in terms of the onset of a hard Mott-Hubbard gap Δ in the impurity band formed by the shallow manganese acceptor in InSb at N Mn∼N cr. A model describing the gap formation is proposed.
    Type of Medium: Electronic Resource
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