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  • 78.20  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Generalized Planck's radiation law for luminescence via indirect transitions (1995)
    Springer
    Applied physics 60 (1995), S. 67-70 
    Details
    ISSN: 1432-0630
    Keywords: 78.20 ; 78.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Based on microscopic transition probabilities and on the principle of detailed balance, absorption and emission rates are calculated for indirect transitions. It is found that the emission rate at a photon energy ħω can be expressed by the absorption coefficient for the same photon energy in the same way as for direct transitions. This relation is quite generally valid including cases where the electrons in the exited state (conduction band) and the electrons in the ground state (valence band) are distributed according to two different quasi-Fermi distributions. A generalized Planck's law is formulated for luminescence which contains a nonzero chemical potential of the emitted photons as the only difference to the description of thermal radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01577615
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Verification of a generalized Planck law for luminescence radiation from silicon solar cells (1992)
    Springer
    Applied physics 54 (1992), S. 109-114 
    Details
    ISSN: 1432-0630
    Keywords: 78.20 ; 78.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A generalization of Planck's radiation law based on the principle of detailed balance predicts the emission of luminescence radiation from absorption data for direct transitions in semiconductors. Its validity for indirect transitions is questionable due to the participation of phonons. We have tested the validity for the indirect transitions in Si by measuring absolute values of the emission intensity from Si solar cells under forward bias at room temperature and find good agreement with theoretical predictions based on existing absorption data. The generalized Planck law, thus verified for the indirect transitions in Si, allows to determine the performance of solar cell materials from measuring the absolute intensity of their emission of luminescence radiation when irradiated by the sun.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323895
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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