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Digitale Medien

Search for giant Franz-Keldysh-like effects in GaSe and other layered semiconductors (1992)

Sulewski, P. E. ; Bucher, E. ; Stücheli, N. ; [weitere]

Springer

Applied physics 54 (1992), S. 79-83

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ISSN: 1432-0630

Schlagwort(e): 78.20 Jq ; 78.65 Gb ; 42.70 Fh

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Recently, an anomalously large redshift of the absorption edge with electric field was claimed for β-GaSe1−x S x layered crystals. We have studied Bridgman grown ε-GaSe crystals as well as vapor transport grown β-GaS, and 2H-WSe2. While we have observed a shift in the absorption edge for ε-GaSe similar to that reported in previous work, our results demonstrate that the redshift arises from Joule heating, and is thus temperature induced, rather than intrinsic. For β-GaS, much larger resistivities virtually eliminate Joule heating, and our measurements of the electric field induced absorption edge shift yield an estimated upper limit of approximately 0.04 meV · cm/kV for a field of 2.4×103 kV/cm, in good agreement with the theoretical value expected for the Franz-Keldysh effect.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00348135

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