ISSN:
1432-0630
Keywords:
68.55
;
78.65
;
78.70
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Ultrathin-layer (AlAs) m (GaAs) m superlattices withm = 1, 2, and 3 were grown by molecular beam epitaxy and characterized by x-ray diffraction and photoluminescence measurements. The appearance of distinct satellite peaks around the Bragg reflections demonstrate the formation of high-quality layered crystals. The observed luminescence shows a maximum at 2.033 eV form = 3, and the emission energy decreases form = 2 andm = 1 as well as for them = 4 superlattice. This result for the monolayer superlattice is in good agreement with recent theoretical calculations, and it shows that the (AlAs)1(GaAs)1 superlattice represents a new artificial semiconductor material with novel electronic properties.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00615210
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