ISSN:
1432-0630
Schlagwort(e):
72.20
;
79.20
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract The distinction between avalanche and tunneling breakdown in one-sided abrupt junctions is made on the basis of a new, simple expression for the tunneling breakdown field strengthF t. It is shown thatF t [V/cm] depends upon the temperatureT [K], the reduced tunneling effective massm eff + /m o and the semiconductor energy band gapE g [eV] according to the following equation $$F_t = 1.76 \cdot 10^6 \cdot \left( {\frac{T}{{300}}} \right) \cdot \left( {\frac{{m_{eff}^ + }}{{m_0 }} \cdot E_g } \right)^{{1 \mathord{\left/ {\vphantom {1 2}} \right. \kern-\nulldelimiterspace} 2}} [V/cm].$$ Using published calculations for the avalanche breakdown voltage, the result is applied to the semiconductors Ge, Si, GaAs and GaP at 300 K and InSb at 77K.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00930386
Permalink